Integrated circuit structure comprising capacitor and corresponding manufacturing process

摘要

A circuit structure (1;110) integrated on a semiconductor substrate (2;20) and comprising: at least one MOS device (4;40); and at least one capacitor element (5;50); said at least one MOS device (4;40) having conduction terminals (6,7;60,70) formed in the semiconductor layer and a control terminal (8;80) covered with an overlying insulating layer (12;120) of unreflowed oxide whereon said capacitor element is formed; and said at least one capacitor element having a bottom electrode (9;90) and a top electrode (10;101). <IMAGE>