发明名称 |
High voltage resistive structure integrated on a semiconductor substrate |
摘要 |
Resistive structure (10) integrated on a semiconductive substrate (1) having a first type of conductivity and formed by a serpentine region (2) of conductivity which is opposite to that of the semiconductive substrate in which at least two parallel portions (3) of the serpentine region (2) there is at least one insulating trench. <IMAGE> |
申请公布号 |
EP0996158(A1) |
申请公布日期 |
2000.04.26 |
申请号 |
EP19980830638 |
申请日期 |
1998.10.23 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
LEONARDI, SALVATORE |
分类号 |
H01L21/761;H01L21/762;H01L27/08 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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