发明名称 Low stress polysilicon film and method for producing same
摘要 Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.
申请公布号 AU6505399(A) 申请公布日期 2000.04.26
申请号 AU19990065053 申请日期 1999.10.04
申请人 CASE WESTERN RESERVE UNIVERSITY 发明人
分类号 C23C16/24;C23C16/44;C23C28/02;H01L21/205;H01L21/285 主分类号 C23C16/24
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