| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to accumulate efficiently carriers within arranging a channel layer by a barrier layer between a channel layer and a gate electrode. CONSTITUTION: A semiconductor device comprises a substrate, a first semiconductor layer(1)of a first conductive type, a second semiconductor layer(2) formed on the first semiconductor layer of the first conductive type, a third semiconductor layer(3) formed on the second semiconductor layer of the first conductive type, a first low resistance layer formed on the third semiconductor layer of a second conductive type, a second low resistance layer on the first low resistance layer of the second conductive type, and a gate electrode(4) formed on the second resistance layer. A method for manufacturing the same comprises the steps of: forming a first, a second, a third, and a fourth semiconductor layer; forming a first and a second open hole; forming a sixth semiconductor layer; and forming a gate electrode. |
