SEMICONDUCTOR DEVICE HAVING LOW CONTACT RESISTANCE TO HIGHLY DOPED REGION

摘要

PURPOSE: A semiconductor device having low resistance to highly doped region is provided to decrease thickness of a titanium layer and to simply reduce contact resistance to diffused region without an obstacle of a thin oxide layer. CONSTITUTION: At least a layer containing titanium is provided to a contact hole between highly doped region or a region(2) made into silicon and contact metal(8) connected to external lead. A semiconductor device has low contact resistance to highly doped region or a region(2) made into silicon of n plus or p plus conductive type of a semiconductor body. A halogen is provided to the highly doped region or the region(2) made into silicon of the contact hole(4). The halogen is a fluorine and injected in amount of 10sup12 to 10sup16.