发明名称 |
METHOD FOR FORMING VACUUM IN A SOURCE CHAMBER OF ION IMPLANTER |
摘要 |
PURPOSE: A vacuum formation method in a source chamber of ion implanter is provided to increase a lifetime of a turbo pump by preventing the turbo pump from polluting. CONSTITUTION: A method comprises the steps of making vacuum state a turbo pump(104)and a source chamber(100) vacuum state by using a roughing pump(102), operating the turbo pump(104) when the degree of vacuum in the source chamber(100) reach to a predetermined level. At this time, when RPM of the turbo pump(104) reach to a desired level, the turbo pump(104) and the roughing pump(102) are simultaneously operated by opening a valve(E) connected between the turbo pump(102) and the source chamber(100).
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申请公布号 |
KR20000021280(A) |
申请公布日期 |
2000.04.25 |
申请号 |
KR19980040296 |
申请日期 |
1998.09.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, JONG SUNG;PARK, JIN YOUNG;PARK, HEUNG WOO;NAM, YOUNG MIN |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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