THIN FILM TRANSISTOR USING A METHOD OF CRYSTALLIZING A SILICON THIN FILM AND A METHOD THEREOF

摘要

PURPOSE: A method of manufacturing a thin film transistor is provided to improve a characteristic of a device by using a silicon thin film transistor having an outstanding dimension of a silicon grain as an active layer of the thin film transistor. CONSTITUTION: A method of manufacturing a thin film transistor comprises the steps of: preparing a substrate in which an amorphous silicon thin film in a predetermined position is formed on a medium layer having a space inside; forming a polycrystalline silicon thin film after crystallizing the amorphous silicon thin film through a process for supplying laser energy to the amorphous silicon thin film; forming an active layer by photo lithographing the polycrystalline silicon thin film; forming a gate insulation layer and a gate electrode on the active layer; forming a passivation layer covering an exposed surface of the substrate including the gate electrode; exposing a part of the active layer by photo lithographing the passivation layer; and forming a source and a drain electrodes connected to the exposed active layer.