SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to prevent degradation due to fatigue phenomenon by using reference cells having operating times more than the capacitor of a memory cells in non-reversed area, thereby increasing the life of LSI ferroelectric memory cell(FeRAM) CONSTITUTION: A semiconductor memory device comprises plural ferroelectric memory cells (40) and plural reference cells(30). The capacitor area of the memory cell is same to the capacitor area of the reference cell. The voltage(Vm) applied to the memory cell is smaller than the voltage(Vr) applied to the reference cell. The voltage(Vr) is between voltage of high status and voltage of low status in the memory cell.