| 摘要 |
PURPOSE: A dry etching method and method for fabricating a semiconductor device using the same are provided to effectively restrain the generation of a facet of a resist pattern having a sensitivity at DUV wavelength and to form a conductive pattern having controlled pattern width regardless of pattern density. CONSTITUTION: A resist pattern(45) is formed on a conductive layer(43). Rare-gas plasma,composite gas plasma of the rare-gas and fluorine group gas or N2 gas plasma is irradiated to the resist pattern(45). The conductive layer(43) is dry-etched using the resist pattern(45) as a mask and an anti-reflection layer(44) formed between the conductive layer(43) and the resist pattern(45) is removed at the same time.
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