| 摘要 |
PROBLEM TO BE SOLVED: To prevent a scattered component from mixing into an adjoining solution container of a raw material and substrate holder, and from attaching to a substrate, when carrying out the liquid phase epitaxial growing of a compound semiconductor comprising easily scattered components such as GaInP and AlGaInP. SOLUTION: An epitaxial layer of a compound semiconductor containing a volatile constituent such as phosphorus is grown on a substrate 7 by allowing a raw material solution holder 3 which has raw material solution containers 11a, 11b and 11c, to face to a substrate holder 2, using a growing apparatus enabling relatively slidable movement while cooling the substrate 7 from a prescribed temperature, and bringing the substrate 7 into contact with a raw material solution 5 for growth. A cap holder 4 is put lid on the upper surface on the other side of the sliding face of the raw material solution holder 3 to prevent the evaporation and the dispersion of the volatile constituent. Grooves 6 and 8 are formed at a sliding face of the substrate holder 2 and the raw material solution holder 3 or the contacting face of the lid and the raw material solution holder 3. The gas volatilized from the raw material solution is introduced to the grooves 6 and 8, and discharged to the outside. |
