| 摘要 |
A method of forming a suicide layer 12 is disclosed herein. In one embodiment, a refractory metal (e.g., titanium) layer 20 is formed over a silicon (e.g., polysilicon) layer 10. The silicon layer 10 and the titanium layer 20 are then heated to a first temperature so that the silicon 10 and titanium 20 react to form a titanium silicide region 12. While applying an external force to warp the device, the titanium silicide region 12 is heated to a second temperature. This second temperature is higher than the first temperature. In one embodiment, this two-step heating process helps facilitate the transition from C49 phase TiSi2 to C54 phase TiSi2.
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