| 摘要 |
The surface 1a of a single crystal alpha -SiC substrate 1 is adjusted so as to have a surface roughness equal to or lower than 2,000 angstroms RMS, and preferably equal to or lower than 1,000 angstroms RMS. On the surface 1a of the single crystal alpha -SiC substrate 1, a polycrystalline alpha -SiC film 2 is grown by thermal CVD to form a complex is placed in a porous carbon container and the carbon container is covered with alpha -SiC powder. The complex is subjected to a heat treatment at a temperature equal to or higher than a film growing temperature, i.e., in the range of 1,900 to 2,400 DEG C. in an argon gas flow, whereby single crystal alpha -SiC is integrally grown on the single crystal alpha -SiC substrate 1 by crystal growth and recrystallization of the polycrystalline alpha -SiC film 2. It is possible to stably and efficiently produce single crystal SiC of a large size which has a high quality and in which any crystal nucleus is not generated.
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