METHOD FOR FORMING SILICIDE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a silicide of a semiconductor device is provided to prevent a knock-on phenomenon generates by impurities of high concentration implanted for forming a source/drain. CONSTITUTION: A method for forming a silicide of a semiconductor device comprising the steps of: forming a metal layer(9) by sputtering a metal element of 8-group on a semiconductor substrate(1) having field oxide(2), gate(3) and source/drain region(4); forming a silicide(11) layer by thermally treating the resultant structure having the metal layer(9); forming a source/drain(10) by implanting impurity ions on the whole surface of the resultant structure having the silicide layer(11) with high concentration; thermally treating the resultant structure having the source/drain(10); and removing the metal layer(9).