| 摘要 |
PURPOSE: A semiconductor device and manufacturing method thereof is provided to decrease the number of process by forming a copper pad film on a last protection insulating film through a contact hole. CONSTITUTION: A protection insulating film(2) composed of an oxidation film having a trickiness of 3 to 4 micro meter thickness is formed on a semiconductor substrate(1). An interconnection trench(3) is formed on the protection insulating film(2). A priority layer copper wire(5) is formed on the interconnection trench(3) through a first barrier metal film(4) composed of a titanium nitration material having a thickness of about 50nms. A copper pad film(9) is formed to a center region of the priority layer copper wire(5) through a second barrier metal film(8). The second barrier metal film(8) is composed of a deposit film having a nickel film having a thickness of about 50nm thickness, a nickel film having a thickness of about 10nm thickness, and a gold film having a thickness of about 10nm. |
