| 摘要 |
PURPOSE: A photosensitive polymerization and a chemical amplification type photoresist composition is provided to reduce the occurrence of the lifting of the photoresist pattern by good adhesion and to increase the contrast by the difference between the polarity of the unexposed photoresist and the polarity of the exposed photoresist. CONSTITUTION: A deprical polymerization and a chemical amplification type photoresist composition comprises a c and a photo acid generator. A triarylsulfonium salts, diaryliodonium salts, sulfonates, N-hydroxysuccinimide salts are adaptable to be used as the photacis generator. The photoresist composition further comprises an organic salts. A triethylamine, a triisobutylamine, a triiso-octylamine, diethanolamine, triethanolamine are adaptable to be used as organic salts. The photoresist composition is formed in a cyclic structure and has big etching endurance.
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