COMBINED PREANNEALING/OXIDATION METHOD USING RAPID THERMAL PROCESSING

摘要

PURPOSE: A method is provided to provide processes for manufacturing a silicon wafer by simultaneously forming a thickness of a given mark and an oxide layer of a denuded zone. CONSTITUTION: A single-crystal silicon wafer undergoes temperatures which go up to 1200°C from the atmosphere temperature and then return to the atmosphere temperature for a 10 second holding time period. An oxide layer thickness and a denuded zone depth are controlled to desired mark values by controlling the temperatures and the annealing time in a high pressure accessed to about 740T atmosphere pressure and in a 100% oxygen, to thereby simultaneously obtain a thickness of a given mark and a depth of an oxide layer of the denude zone.