发明名称 |
Method for forming a cavity capable of accessing deep fuse structures and device containing the same |
摘要 |
A method for forming a cavity (30) to a structure such as a poly fuse (114) with a deep etch process whereby a mask is formed over the structure a first dielectric layer (23) and an etch partially through the first dielectric layer is performed. Next, a second dielectric layer (34) is deposited and a second mask is formed for completing the etch to the structure. Finally, an etch through the second dielectric (34) to an area at or near the structure is performed. A resultant device has non-etched second dielectric material on the sidewalls of the etch cavity 30.
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申请公布号 |
US6054340(A) |
申请公布日期 |
2000.04.25 |
申请号 |
US19970870286 |
申请日期 |
1997.06.06 |
申请人 |
MOTOROLA, INC. |
发明人 |
MITCHELL, JOEL;CUMPLAN, FRED;PFEFFER, GARY |
分类号 |
H01L23/525;(IPC1-7):H01L21/82 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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