| 摘要 |
PURPOSE: A method is provided to carry out an exposure simulation with respect to an entire chip area by obtaining estimated error information fully in a short time period with respect to a drawing pattern of an object. CONSTITUTION: A first calculation candidate point is produced between non-contact points,a second calculation candidate point is produced in correspondence with the first calculation candidate point, and plural calculation points are produced on a linear line penetrating the first and second calculation candidate points and on a portion transversing the first and second non-contact parts(S11, S12). An exposure intensity is calculated at the calculation points and a drawing pattern estimated values on the line are calculated according to the result of the above calculation(S13, S14). an error is calculated as the above result(S15, S16, S17). |
