| 摘要 |
PURPOSE: A field effect transistor, semiconductor structure and method for fabricating the same are provided to increase threshold voltage in the neighborhood of a corner of insulating region of a semiconductor structure such as FET, to simplify the process for increasing threshold voltage, to simply and reliably perform modeling, to increase voltage tolerance and to increase tolerance about electrical over stress and ESD. CONSTITUTION: A field effect transistor comprises: a source and drain region(26,28) formed in a substrate(20); a channel region(24) formed between the source region and drain region; an insulating region(22) being adjacent to the source region, channel region and drain region in the substrate; a gate(30) formed on the channel region and having gate dopants separated from the channel region(24) by a gate insulator(32), wherein the gate comprises a region, where the gate dopants are depleted, overlapping with the channel region(24) and insulating region(22).
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