发明名称 METHOD FOR FABRICATING MULTI-LAYERED WIRE STRUCTURE
摘要 PURPOSE: A method for fabricating a multi-layered wire structure is provided to form a connection hole having a low section change in a depth direction as well as form a dual damascene wire having high yield by suppressing the wire delay. CONSTITUTION: In order to form a connection hole(16) having a good shape stably when forming a groove and the connection hole by a dual damascene method, a method for fabricating a multi-layered wire structure includes the processes of: forming an inter level dielectric film(15) covering a bottom layer wire(14); forming the connection hole reaching the bottom layer wire on the inter level dielectric film; forming an inter metal dielectric film(17) filling the connection hole on the inter level dielectric film with an insulation material having an etching rate faster than the etching rate of the inter level dielectric film; and forming a concave part(18) on the inter metal dielectric film and at the same time opening a connection hole continuously on the concave part selectively again.
申请公布号 KR20000023165(A) 申请公布日期 2000.04.25
申请号 KR19990039488 申请日期 1999.09.15
申请人 SONY CORPORATION 发明人 DAGUCHI MITHRU;KATO MURASHNGO
分类号 H01L21/033;H01L21/312;H01L21/768;H01L23/522;(IPC1-7):H01L21/768 主分类号 H01L21/033
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