METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole in a semiconductor device is to achieve high selection ratio, high aspect ratio and excellent profile upon forming the contacts. CONSTITUTION: A method comprises the steps of: forming a gate electrode(23a) with a gate insulating film(22) in a designated area of a semiconductor substrate(21); forming a cap insulating film(24a) on the gate electrode; forming side walls of an insulating film in the both sides surfaces of the cap insulating film and the gate electrode; selectively forming a metal salicide film(27) at the surfaces of the semiconductor device both in the both sides walls of the insulating film and the gate electrode; performing a heat treatment process of an extended period of time under the high temperature onto the whole surfaces of the semiconductor substrate comprising the metal salicide film to form an insulating film(28); and forming a contact hole(30) by selectively removing the insulating film and the cap insulating film using the plasma gases mixed with the mixing gases consisting of CHxFy, O2 and Ar as to expose parts of the surfaces of the semiconductor substrate and the gate electrode.