STATIC RANDOM ACCESS MEMORY CELL AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A method of manufacturing a static random access memory(SRAM) cell is provided to improve a characteristic of a device by eliminating a parasitic P-N diode. CONSTITUTION: A method of manufacturing a static random access memory(SRAM) cell comprises the steps of: defining an active region by forming a field oxidation layer on a semiconductor substrate having a well and forming an access transistor and a driver transistor; sequentially forming a first insulation layer, a ground potential line and a second insulation layer on the entire structure having the driver transistor; forming a node contact hole by sequentially etching a selected part of the second and the first insulation layers to expose a part of the gate of the driver transistor and a part of the active region; forming a metal plug in the node contact hole; and a thin film transistor electrically connected with the metal plug.