METHOD FOR CORRECTING DISCHARGE AMOUNT OF SECONDARY ELECTRON FOR PREVENTING WAFER CHARGE UP OF ION INJECTING EQUIPMENT

摘要

PURPOSE: A method for correcting a discharge amount of a secondary electron is to prevent a wafer charge up of an ion injecting equipment. CONSTITUTION: An ion injecting equipment comprises an electron flood gun(2) for discharging a first electron and a faraday(4) for discharging a secondary electron to be entered to the wafer by a collis ion with the first electron. The discharging amount of the first electron is regulated according to a bias voltage(E1,E2). The discharging amount of the secondary electron is regulated according to a bias voltage(E3) connected to the faraday. The faraday is formed to surround the front of a wafer(WF) to which an ion beam is entered. The ion beam is to irradiate a compound ion as source for doping the wafer. The secondary electron is to prevent a charge up of the wafer to be electric charged by an incidence of the ion beam.