发明名称 |
Self-aligned source process |
摘要 |
A process for creating a semiconductor memory device, featuring the formation of FOX regions, after the creation of a source region, has been developed. The process features a source region, self-aligned to a first set of stacked gate structures, with the subsequent FOX region placed perpendicular to the source region, between a second set of stacked gate structures.
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申请公布号 |
US6054348(A) |
申请公布日期 |
2000.04.25 |
申请号 |
US19980079880 |
申请日期 |
1998.05.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LIN, RUEI-LING;HSU, CHING-HSIANG;LIANG, MONG-SONG |
分类号 |
H01L21/336;H01L21/8247;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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