发明名称 Synchronous semiconductor memory device exhibiting an operation synchronous with an externally inputted clock signal
摘要 A synchronous semiconductor memory device has a pseudo internal command signal generator for generating a pseudo internal command signal which controls, in non-synchronizing with an externally inputted clock signal, an internal command signal having been generated in synchronizing with the externally inputted clock signal.
申请公布号 US6055209(A) 申请公布日期 2000.04.25
申请号 US19980106101 申请日期 1998.06.29
申请人 NEC CORPORATION 发明人 ABO, HISASHI
分类号 G01R31/28;G11C7/22;G11C11/401;G11C11/407;G11C29/12;(IPC1-7):G11C8/00 主分类号 G01R31/28
代理机构 代理人
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