Elevated local interconnect and contact structure

摘要

A semiconductor process in which a local interconnect, formed above a first transistor level, is connected to the first transistor level through a self-aligned and low resistivity contact structure. A semiconductor substrate is provided and a first transistor level formed on an upper surface of the semiconductor substrate. The first transistor level includes a first transistor. A local interconnect is then formed over the first transistor level. The local interconnect is vertically displaced above the first transistor level such that the local interconnect may traverse a gate of the first transistor without contacting the gate. A contact structure is then formed to connect the first source/drain structure of the first transistor with the local interconnect. The contact structure includes a first self-aligned silicide at an interface between the contact structure and the first source/drain region and further includes a second self-aligned silicide at an interface between the contact structure and the local interconnect.