| 摘要 |
PURPOSE: A semiconductor IC device and a manufacturing method thereof are provided to enhance the reliability of connection and to simplify process. CONSTITUTION: A semiconductor IC device comprises first wiring lines(23-26), a first insulation film(38), a second insulation film(39), a second wiring line(54), a first conductive layer, a third insulation film, a power supply wiring line and a second conductive layer. The first wiring line is formed on a MISFET(metal insulator semiconductor field effect transistor) for selecting a memory cell. The first insulation film is formed on the first wiring line. The second insulation film is formed on a capacitance element(C) for accumulating information. The second wiring line is formed on the second insulation film. The first conductive layer is formed within a first through(64) hole formed in the first and second insulation films. The power supply wiring line supply prescribed power potential to an upper electrode(47) formed on the capacitance element. |
