| 摘要 |
PURPOSE: A method is provided for semiconductor on insulator transistor, memory and other DRAM circuitry and arrays, transistor gate arrays, and methods of fabricating such constructions. CONSTITUTION: The semiconductor on insulator transistor includes insulator layer, semiconductor material layer, two elevationally spaced source/drain diffusion region, and reansistor gate. A semiconductor on insulator transistor includes: a) an insulator layer; b) a layer of semiconductor material over the insulator layer; c) a transistor gate provided within the semiconductor material layer; and d) an outer elevation source/drain diffusion region and an inner elevation diffusion region provided within the semiconductor material layer in operable proximity to the transistor gate. In another aspect, DRAM circuitry includes a plurality of memory cells not requiring sequential access, at least a portion of the plurality having more than two memory cells for a single bit line contact. In still another aspect, a DRAM array of memory cells comprises a plurality of word lines, source regions, drain regions, bit lines in electrical connection with the drain regions, and storage capacitors in electrical connection with the source regions; at least two drain regions of different memory cells being interconnected with one another beneath one of the word lines.
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