| 摘要 |
PURPOSE: A semiconductor substrate and a methode for forming the same are provided to reduce a thickness of a nonporous single crystal layer by performing a heat treatment process under an atmosphere not containing a source gas of the nonporous signal crystal layer. CONSTITUTION: A methode for forming a semiconductor substrate comprises the step of performing a heat treatment process for a porous silicon layer(11) under an atmosphere not containing a source gas of a nonporous signal crystal layer(6). In the methode, a condition of the heat treatment process is defined with (a haze value of the porous silicon layer surface after performing the heat treatment process)/(a haze value of the porous silicon layer surface before performing the heat treatment process). A semiconductor substrate is formed with the methode. |
