发明名称 |
Semiconductor memory cell and method of manufacturing the same |
摘要 |
A semiconductor memory cell comprising (1) a first transistor of a first conductivity type for read-out having source/drain regions composed of a surface region of a third region and a second region and a channel forming region composed of a surface region of a first region, (2) a second transistor of a second conductivity type for write-in having source/drain regions composed of the first region and a fourth region and a channel forming region composed of a surface region of the third region, and (3) a junction-field-effect transistor of a first conductivity type for current control having gate regions composed of the fourth region and a portion of the first region facing the fourth region, a channel region composed of the third region sandwiched by the fourth region and the first region and source/drain regions composed of the third region.
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申请公布号 |
US6055182(A) |
申请公布日期 |
2000.04.25 |
申请号 |
US19980053026 |
申请日期 |
1998.04.01 |
申请人 |
SONY CORPORATION |
发明人 |
MUKAI, MIKIO;HAYASHI, YUTAKA |
分类号 |
H01L27/108;G11C11/401;G11C11/403;G11C11/405;H01L21/8242;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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