| 摘要 |
PURPOSE: A semiconductor integrated circuit device is provided to suppress a consumption power increment by a sub-threshold leakage current at a standby state. CONSTITUTION: A semiconductor integrated circuit device comprises a circuit(100) which has a PMOS transistor and an NMOS transistor. A power supply control circuit(101) supplies a power supply voltage to the PMOS and NMOS transistors, and a substrate bias control circuit(102) supplies a substrate bias voltage to the PMOS and NMOS transistors. In a first state, the substrate bias control circuit(102) supplies a substrate bias voltage into the PMOS and NMOS transistors and the power supply control circuit(101) supplies a first power supply voltage and a second power supply voltage lower than the first power supply voltage. In a second state, the substrate bias control circuit(102) controls a substrate bias voltage supplied to the PMOS transistor so as to have a higher potential than the substrate bias voltage supplied to the PMOS transistor in the first state, and controls a substrate bias voltage supplied to the NMOS transistor so as to have a lower potential than the substrate bias voltage supplied to the NMOS transistor in the first state. And the power supply control circuit(101) controls the first power supply voltage so as to have a lower potential than a voltage supplied in the first state.
|
