SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device is provided to prevent a reaction with a high ferroelectric substance and an insulation membrane between layers as well as to prevent a membrane separation by mounting a reaction prevention membrane and a diffusion prevention membrane. CONSTITUTION: A capacitor is embedded in a diffusion prevention layer(51) on which a lower electrode, a high ferroelectric substance membrane(71), and an upper electrode(72) are formed. The high ferroelectric substance membrane(71) and the upper electrode(72) are in a pattern corresponding to each memory cell and exist over plural memory cells. The diffusion prevention layer(51) is embedded in a reaction prevention layer(43) and not oxidized when heat-processing for crystalization of the high ferroelectric substance(71).