| 摘要 |
PURPOSE: A method for manufacturing semiconductor IC device is provided to manufacture system LSI having both of large scale DRAM and high performance logic LSI with high productivity CONSTITUTION: A method for manufacturing semiconductor IC device comprises (a) a step forming a first insulation film, plural second gate electrodes and plural semiconductor areas, (b) a step sequentially forming second and third insulation films, (c) a step exposing the surface of a semiconductor substrate, and (d) a step sequentially exposing the surface of the second gate electrodes and the surface of the semiconductor areas. In the step (a), the first insulation film isn't formed on top of the plural second gate electrodes. In the step (c), first holes formed to be self-aligned with plural first gate electrodes |
