METHOD FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE USING DEUTERIUM OXIDE OR DEUTERIUM

摘要

PURPOSE: A method for forming an insulting film for a semiconductor device is to improve a reliability characteristic of the device by adding a sufficient amount of deuterium to Si/SiO2 interface. CONSTITUTION: A method for forming an insulting film for a semiconductor device using adeuterium oxide or a deuterium comprises the steps of: getting a silicon wafer into a furnace and heating it; and oxidizing the heated silicon wafer under an oxidizing gas and the deuterium oxide or the deuterium atmosphere and forming an insulating film. A first step of oxidation is executed using one selected from the group consisting of O2, N2O, and NO as an oxide growing gas, and then a second step of oxidation is executed under the deuterium oxide atmosphere. A flow ratio of the deuterium oxide to the oxide growing gas is a ratio of 3 to 10 SLM(standard liter per minute). A mixing ratio of the deuterium oxide to the oxidizing gas is 1: 0.1 to 1: 10 in using together the deuterium oxide and the oxidizing gas.