| 摘要 |
PROBLEM TO BE SOLVED: To uniformly flatten the whole surface of a semiconductive substrate in a grinding device or pad to be used in a mechanical flattening process, for smoothing the surface of an insulating layer or metallic wiring formed on the semiconductive substrate by grinding. SOLUTION: A semiconductive substrate is fixed to a grinding head, and the substrate is pushed against by an abrasive layer having a micro-rubber A hardness of 70 deg. or more and fixed to an abrasive surface plate via a cushion layer having a volume modulus of 600 kg/cm2 or more and a compression elastic modulus of 10 kg/cm2 or more and 140 kg/cm2 or less. The substrate is ground by rotating the head or the surface plate or both of them in the condition where the warping or irregularities of the substrate itself is absorbed into the cushion layer. |
