| 摘要 |
PURPOSE: A non volatile semiconductor memory device is provided to prevent an increment of a circuit scale when storing multi-value data to a memory cell. CONSTITUTION: In a non volatile semiconductor memory device, a plurality of latchcircuits(LQ1,LQ2) simultaneously latch write data at writing, and are set with predetermined data when data is sufficiently written at verifying. Read data is set at the latch circuits of the plurality at reading. A write controller(23) sets bit line voltages according to the data latched in the latch circuits at writing. A verify controller(23) sets a word line voltage according to a distribution state of a threshold voltage at verifying, and secures the latch circuits according to whether a threshold voltage of a memory cell exceeds a voltage applied to the word line. The verify controller(23) controls such that predetermined data is set in the latch circuits when data is sufficiently written at verifying. A read controller(23) sets a word line voltage according to a distribution state of a threshold voltage at reading, and secures the latch circuits according to whether a threshold voltage of a memory cell exceeds a voltage applied to the word line.
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