METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to realize an easy patterning and obtain a high quality of a semiconductor device by performing etching to open through holes in a state of a low aspect ratio. CONSTITUTION: A first insulation membrane(9) is formed on a lower layer having an electric conductor layer(17). First openings are formed in the first insulation membrane(9) to expose a portion of the electric conductor layer(17). A second insulation membrane(12) is formed while the first openings are filled with the second insulation membrane(12). A mask is formed on the second insulation membrane(12) to have an openings in the same size as the first openings in regions corresponding to the first openings. A wiring layer electrically connected to the electric conductor layer(17) is formed.