| 摘要 |
PURPOSE: An integrated semiconductor memory is provided to reduce a power loss by making a supply potential of higher driver performance applied to a memory bank only when a separate memory bank operates to access one memory cell. CONSTITUTION: In an integrated semiconductor memory, lines(11,21,31,41) for memory banks (1,2,3,4) are connected to a decoder(5). Voltage sources(10,20,30,40) are separately assigned to the memory banks(1,2,3,4). When one memory bank(1) is operated by a separate output signal(Al1), a higher driving capacity is provided to a supply potential for the memory bank(1). When the memory bank(1) is not operated by the output signal(Al1), a lower driving capacity is provided to the supply potential. The voltage sources(10,20,30,40) are controlled to provide the supply potential according the manner of the above description.
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