发明名称 METHOD FOR MANUFACTURING ELECTRONIC DEVICES AND CHANNELS
摘要 PURPOSE: A method is provided to effectively cool semiconductor devices or semiconductor device groups by positioning cooling channels or thermal conductors under a junction region of an active device selected in a semiconductor layer. CONSTITUTION: A substrate(30) includes devices(36) having channel regions(33), source and drain regions(31), and gates(35) which are isolated by selective isolation regions(34). An interlevel wiring layer(44) is formed on the substrate(30), which has interlevel dielectric levels(41), a wiring level(43), and viases(42) arranged on the wiring level(43). A substrate(20) includes plural hollow coolant channels(22) for circulating a coolant fluid which is gas such as helium or nitrogen. An upper portion of each of the channels(22) is contacted with lower surfaces of oxic horizons(32). Each of the channels(22) is defined in size and position to be substantially arranged with each of the channel regions(33).
申请公布号 KR20000022694(A) 申请公布日期 2000.04.25
申请号 KR19990032884 申请日期 1999.08.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION. 发明人 MAMILLION PATRISHA MACGINESS;PARAGONIA ANTHONY MICHAEL;PIERSON BERNADET N.;SHUMITS DANIS ARTHER
分类号 H01L23/36;H01L23/473;H01L27/12;(IPC1-7):H01L23/36 主分类号 H01L23/36
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