| 摘要 |
PURPOSE: A semiconductor memory device is provided to operate normally although the input/output bit number is many. CONSTITUTION: In a semiconductor memory device, a plurality of memory cell columns (211-21(n-1)) have at least two memory cells, respectively. The number of input/output lines(241-24(n-1)) is less than the number of the memory cell columns. A plurality of switches(231-23(n-1)) are installed corresponding to the input/output lines, and connects one of adjacent memory cell columns to a corresponding input/output line in response to a control voltage. A control voltage fixing circuit(30) sets the control voltage supplied to the switches into a 'H' level or a 'L' level. A plurality of defect location setting parts are connected in serial. One end of each defect location setting part is set with a potential of a 'H' level and the other end thereof is set with a potential of a 'L' level. A voltage of a connection node between defect location setting parts is supplied to the switches.
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