Semiconductor device having SEPP connected NPN and PNP transistors

摘要

A semiconductor device capable of maintaining good temperature compensation and reducing manufacture costs of SEPP connecting NPN and PNP power transistors and temperature compensating and biasing circuits. A first semiconductor device has an ordinary bias diode formed on the same semiconductor substrate as an NPN power transistor. A second semiconductor device has one or a plurality of Schottky barrier type diodes formed on the same semiconductor substrate as a PNP power transistor. The forward voltage drop V1 of the diode is set to an arbitrary constant value smaller than E exclusive of about E/2, and the total forward voltage drop V2 of the Schottky barrier diode or diodes is set to a predetermined value of about (E-V1), where E is a total forward voltage drop between the bases and emitters of the NPN and PNP power transistors.