发明名称 |
METHOD AND APPARATUS FOR ETCHING A SEMICONDUCTOR WAFER |
摘要 |
PURPOSE: An apparatus for etching a semiconductor wafer is provided to precisely control a profile and speedily etch the wafer by a physical and chemical etching. CONSTITUTION: A method for etching a semiconductor wafer(40) includes a tow step physical and chemical etching. process in order to create vertical side walls (20) required for high density DRAMs and FRAMs. The physical etching process generates a necessary vertical side walls of profiles and an unnecessary veils at the same time. The chemical etching is executed in the continuous process and the veils is eliminated by the chemical etching.
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申请公布号 |
KR20000022428(A) |
申请公布日期 |
2000.04.25 |
申请号 |
KR19987010861 |
申请日期 |
1998.12.30 |
申请人 |
TEGAL CORPORATION |
发明人 |
DEORNELLAS, STEPHEN, P.;COFER, ALFERD;RAJORA, PARITOSH |
分类号 |
C23F4/00;H01J37/32;H01L21/02;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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