METHOD AND APPARATUS FOR CONTACTLESS TREATMENT OF A SEMICONDUCTOR SUBSTRATE IN WAFER FORM

摘要

PURPOSE: An apparatus for contactless treatment of a semiconductor substrate in wafer form can allow one of the gas streams to function as process gas and particularly supply process gas from one side section at a relatively low temperature to the semiconductor substrate, whilst the other side of the semiconductor substrate is subjected to a relatively high temperature originating from the opposite side section. CONSTITUTION: Such a treatment comprises heating the semiconductor substrate. To this end it is proposed to position the semiconductor substrate between two side sections of an enclosing apparatus and to keep the semiconductor substrate floating between said two side sections by introducing gas streams. It has been found that it is particularly effective to heat the substrate by means of at least one of said side sections. The apparatus establishes the space between side sections and semiconductor substrate as 1.0mm. Either a first side section or a second side section is heated to more than 200 De,C tempture.