METHOD OF MANUFACTURING THIN FILM TRANSISTOR

摘要

PURPOSE: A method of manufacturing a thin film transistor is provided to improve yield by preventing defects caused by etching remainder like an electrode layer on a gate insulation layer in forming source/drain electrodes. CONSTITUTION: A method of manufacturing a thin film transistor comprises the steps of: forming a gate on a substrate; sequentially forming a gate insulation layer, an active layer, an ohmic contact layer and an electrode layer to cover the gate on the substrate; patterning the electrode layer, the ohmic contact layer and the active layer of which the portion corresponding to the gate remains to expose the gate insulation layer; and eliminating etching remainder on the gate insulation layer while forming source/drain electrodes by patterning the portion corresponding to the gate of the electrode layer by using the photoresist covering both sides of the ohmic contact layer of the electrode layer.