METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to simplify a manufacturing process and increase reliability by improving a short channel effect and a current driving ability. CONSTITUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a gate pattern composed of a gate insulation layer, a gate and a cap insulation layer on a predetermined portion of a semiconductor substrate having a first peripheral circuit region of a first conductivity, a second peripheral circuit region of a second conductivity and a cell region, the three regions being separated from one another; injecting impurity ions of the second conductivity on the entire surface including the gate pattern; forming a side wall on sides of a plurality of gate patterns with insulating material; forming a first ion injecting mask on the substrate to expose the first peripheral circuit region only; injecting impurity ions of the first conductivity into the substrate with a predetermined incline to the substrate; injecting impurity ions of the second conductivity on the entire surface; diffusing the impurity ions injected into the substrate; eliminating the first ion injecting mask; forming a second ion injecting mask on the substrate to expose the second peripheral circuit region only; injecting impurity ions of the second conductivity into the substrate with a predetermined incline to the substrate; injecting impurity ions of the first conductivity into the entire surface; eliminating the second ion injecting mask; and diffusing impurity ions buried in the substrate.