| 摘要 |
PURPOSE: A method for manufacturing LCD is provided to perform a pad open process as a dry etching by forming a gate insulating film and improve a reliability and a yield rate of a device by preventing a short between a pixel electrode and a data line. CONSTITUTION: An insulating substrate(10) in which pad regions(P1,P2) and a pixel region are defined is formed. A gate line(20) is formed on the pixel region of the insulating substrate(10) using a first mask pattern for a gate. A gate insulating film(30) is formed at a front surface of the insulating substrate(10) as a SiNx film. A thin film transistor is formed on the pixel region of a gate insulating film using a second mask pattern for an edge stopper and a third mask pattern for a source and a drain, and a data line(40) is simultaneously formed. A passivation film(50) is formed at a front surface of the insulating substrate(10) as the SiNx film. The gate insulating film of the pad region(P1) and the passivation film(50) are etched using a fourth mask pattern for opening a pad, and the passivation film(50) of the pad region(P2) is simultaneously etched by a dry etching.
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