发明名称 |
Synchronous semiconductor memory device capable of reducing power dissipation by suppressing leakage current during stand-by and in active operation |
摘要 |
In a synchronous semiconductor memory device of the present invention, a main word driver and a sub decode driver have a function to take in a row decode signal in response to activation of a bank and to maintain the state of the row decode signal. Accordingly, of the circuits associated with row selection, a row pre-decoder, a row decoder and a row system control circuit can operate under a hierarchical power supply structure.
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申请公布号 |
US6055206(A) |
申请公布日期 |
2000.04.25 |
申请号 |
US19990274623 |
申请日期 |
1999.03.23 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TANIZAKI, HIROAKI;HIDAKA, HIDETO;OOISHI, TSUKASA;TOMISHIMA, SHIGEKI |
分类号 |
G11C11/413;G11C7/10;G11C8/08;G11C11/401;G11C11/407;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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