发明名称 TFT SUBSTRATE USING ALUMINUM AS LOW RESISTANCE WIRING AND LCD USING THE SAME
摘要 PURPOSE: TFT substrate using aluminum and LCD using the same do not occur an inferior short owing to an increase of electric resistance value by a contact between aluminum and ITO, and solve an inferior insulation problem, and uses an aluminum as a wiring material. CONSTITUTION: A TFT includes a lower metal layer(3,10) which has a gate terminal(5), a source terminal(12) and a pixel electrode(19), and is electrically connected to Indium tin oxide layer. A contact hole(18,20,22) ranges a gate wiring, and aluminum layer making a source wiring and a drain electrode. The aluminum oxide layer(6,16) and an insulation layer are sequentially deposited, The contact hole ranges to the lower metal layer from the insulation layer surface through the aluminum oxide layer, the insulation layer and the aluminum layer. Indium tin oxide layer are formed either in the contact hole or on the insulation layer. Indium tin oxide layer formed in the contact hole is electrically connected to the lower metal layer. Thereby,
申请公布号 KR20000022732(A) 申请公布日期 2000.04.25
申请号 KR19990034140 申请日期 1999.08.18
申请人 FRONTEC INC. 发明人 CHAE, GI SUNG
分类号 H01L23/52;G02F1/136;G02F1/1362;H01L21/3205;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 H01L23/52
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