Method of and apparatus for removing metallic impurities diffused in a semiconductor substrate

摘要

A method of removing metallic impurities diffused in a semiconductor substrate, comprising, the semiconductor-substrate-heating step of heating a semiconductor substrate to at least 200 DEG C. or higher and promoting the release and rediffusion of metallic impurities diffused in the semiconductor substrate, and the metallic-impurity-removing step of dissolving the metallic impurities arrived at the surface of the semiconductor substrate with a chemical agent and removing them from the substrate.