| 摘要 |
PURPOSE: A non volatile semiconductor memory is provided to be formed in the same process as a flash EEPROM, to have the same scheme for changing data as the flash EEPROM, and to have a function for changing data in a byte unit. CONSTITUTION: In a non volatile semiconductor memory, a memory cell array has a memory cell unit which is composed of a memory cell and two select transistors. Bit lines(BL) are connected to one side of the select transistors. A sense amplifier is connected to the bit line, and has a latch function. The memory cell has a stack gate structure having a floating gate and a control gate. The two select transistors have the same structure as the memory cell. In a case of performing a changing of data for selected memory cells, a control circuit controls such that data of the selected memory cells is read by the sense amplifier and such that data corresponding to the selected memory cells is overwritten.
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